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BAS32L
High-speed switching diode
Rev. 05 -- 3 January 2008 Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features
I I I I I High switching speed: trr 4 ns Reverse voltage: VR 75 V Repetitive peak reverse voltage: VRRM 100 V Repetitive peak forward current: IFRM 450 mA Small hermetically sealed glass SMD package
1.3 Applications
I High-speed switching I Reverse polarity protection
1.4 Quick reference data
Table 1. Symbol IF IFRM VR VF trr
[1] [2]
Quick reference data Parameter forward current repetitive peak forward current reverse voltage forward voltage reverse recovery time IF = 100 mA
[2]
Conditions
[1]
Min -
Typ -
Max 200 450 75 1000 4
Unit mA mA V mV ns
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
NXP Semiconductors
BAS32L
High-speed switching diode
2. Pinning information
Table 2. Pin 1 2 Pinning Description cathode anode
[1]
Simplified outline
Symbol
k
a
1
2
006aab040
[1]
The marking band indicates the cathode.
3. Ordering information
Table 3. Ordering information Package Name BAS32L Description hermetically sealed glass surface-mounted package; 2 connectors Version SOD80C Type number
4. Marking
Table 4. BAS32L
[1] black: made in Philippines brown: made in China
Marking codes Marking code[1] marking band
Type number
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VRRM VR IF IFRM IFSM Parameter repetitive peak reverse voltage reverse voltage forward current repetitive peak forward current non-repetitive peak forward current square wave tp = 1 s tp = 1 ms tp = 1 s Ptot total power dissipation Tamb = 25 C
[1] [2] [1]
Conditions
Min -
Max 100 75 200 450
Unit V V mA mA
-
4 1 0.5 500
A A A mW
BAS32L_5
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 -- 3 January 2008
2 of 10
NXP Semiconductors
BAS32L
High-speed switching diode
Table 5. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tj Tamb Tstg
[1] [2]
Parameter junction temperature ambient temperature storage temperature
Conditions
Min -65 -65
Max 200 +200 +200
Unit C C C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Tj = 25 C prior to surge.
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Rth(j-sp)
[1]
Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air
[1]
Min -
Typ -
Max 350 300
Unit K/W K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol VF Parameter forward voltage Conditions IF = 5 mA IF = 100 mA IF = 100 mA; Tj = 100 C IR reverse current VR = 20 V VR = 75 V VR = 20 V; Tj = 150 C VR = 75 V; Tj = 150 C Cd trr VFR
[1] [2]
Min 620 [1]
Typ -
Max 750 1000 930 25 5 50 100 2 4 2.5
Unit mV mV mV nA A A A pF ns V
diode capacitance reverse recovery time forward recovery voltage
VR = 0 V; f = 1 MHz
-
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. When switched from IF = 50 mA; tr = 20 ns.
BAS32L_5
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 -- 3 January 2008
3 of 10
NXP Semiconductors
BAS32L
High-speed switching diode
300 IF (mA) 200
mbg451
600 IF (mA)
mbg464
400
(1) (2) (3)
100
200
0 0 100 Tamb (C) 200
0 0 1 VF (V) 2
FR4 PCB, standard footprint
(1) Tj = 175 C; typical values (2) Tj = 25 C; typical values (3) Tj = 25 C; maximum values
Fig 1. Forward current as a function of ambient temperature; derating curve
102 IFSM (A) 10
mbg704
Fig 2. Forward current as a function of forward voltage
103 IR (A) 102
mgd006
(1)
(2)
(3)
10
1
1
10-1
10-1 1 10
102
103 tp (s)
104
10-2 0 100 Tj (C) 200
Based on square wave currents. Tj = 25 C prior to surge
(1) VR = 75 V; maximum values (2) VR = 75 V; typical values (3) VR = 20 V; typical values
Fig 3. Non-repetitive peak forward current as a function of pulse duration; maximum values
Fig 4. Reverse current as a function of junction temperature
BAS32L_5
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 -- 3 January 2008
4 of 10
NXP Semiconductors
BAS32L
High-speed switching diode
1.2 Cd (pF) 1.0
mgd004
0.8
0.6
0.4 0 10 VR (V) 20
f = 1 MHz; Tj = 25 C
Fig 5. Diode capacitance as a function of reverse voltage; typical values
8. Test information
tr D.U.T. RS = 50 V = VR + IF x RS IF SAMPLING OSCILLOSCOPE Ri = 50 VR
mga881
tp t
10 % + IF trr t
90 % input signal output signal
(1)
Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor 0.05 Oscilloscope: Rise time tr = 0.35 ns (1) IR = 1 mA
Fig 6. Reverse recovery time test circuit and waveforms
I 1 k 450
I
90 %
V
RS = 50 D.U.T.
OSCILLOSCOPE Ri = 50 10 % t tr tp input signal
VFR
t output signal
mga882
Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty factor 0.005
Fig 7. Forward recovery voltage test circuit and waveforms
BAS32L_5 (c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 -- 3 January 2008
5 of 10
NXP Semiconductors
BAS32L
High-speed switching diode
9. Package outline
3.7 3.3 0.3 0.3
1.60 1.45
Dimensions in mm
06-03-16
Fig 8. Package outline SOD80C
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAS32L
[1]
Package SOD80C
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 2500 -115 10000 -135
For further information and the availability of packing methods, see Section 14.
BAS32L_5
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 -- 3 January 2008
6 of 10
NXP Semiconductors
BAS32L
High-speed switching diode
11. Soldering
4.55 4.30 2.30 solder lands solder paste 2.25 1.70 1.60 solder resist occupied area Dimensions in mm 0.90 (2x)
sod080c
Fig 9. Reflow soldering footprint SOD80C
6.30 4.90 2.70 1.90
solder lands solder resist
2.90 1.70
occupied area tracks
Dimensions in mm
sod080c
Fig 10. Wave soldering footprint SOD80C
BAS32L_5
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 -- 3 January 2008
7 of 10
NXP Semiconductors
BAS32L
High-speed switching diode
12. Revision history
Table 9. BAS32L_5 Modifications: Revision history Release date 20080103 Data sheet status Product data sheet Change notice Supersedes BAS32L_4 Document ID
* * * * * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 1.3 "Applications": amended Figure 4: axis unit for IR reverse current amended from mA to A Figure 9 and 10: amended Section 13 "Legal information": updated Product data sheet Product specification Product specification Product specification BAS32L_3 BAS32L_2 BAS32L_1 -
BAS32L_4 BAS32L_3 BAS32L_2 BAS32L_1
20050322 20020123 19960910 19960423
BAS32L_5
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 -- 3 January 2008
8 of 10
NXP Semiconductors
BAS32L
High-speed switching diode
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BAS32L_5
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 -- 3 January 2008
9 of 10
NXP Semiconductors
BAS32L
High-speed switching diode
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information. . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 January 2008 Document identifier: BAS32L_5

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